5秒后页面跳转
BSS123W PDF预览

BSS123W

更新时间: 2024-11-21 19:14:51
品牌 Logo 应用领域
扬杰 - YANGJIE 开关光电二极管晶体管
页数 文件大小 规格书
6页 599K
描述
Small Signal Field-Effect Transistor,

BSS123W 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.57
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):0.2 A最大漏源导通电阻:5.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSS123W 数据手册

 浏览型号BSS123W的Datasheet PDF文件第2页浏览型号BSS123W的Datasheet PDF文件第3页浏览型号BSS123W的Datasheet PDF文件第4页浏览型号BSS123W的Datasheet PDF文件第5页浏览型号BSS123W的Datasheet PDF文件第6页 
RoHS  
COMPLIANT  
BSS123W  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
100V  
ID  
200mA  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
5.0ohm  
5.5ohm  
General Description  
Trench Power MV MOSFET technology  
Voltage controlled small signal switch  
High density cell design for low RDS(ON)  
Fast Switching Speed  
Applications  
Small servo motor control  
Power MOSFET gate drivers  
Switching application  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
100  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
Drain Current  
VDS  
VGS  
±20  
V
TA=25@ Steady State  
TA=70@ Steady State  
200  
160  
ID  
mA  
mA  
mW  
/ W  
Pulsed Drain Current A  
Total Power Dissipation @ TA=25℃  
IDM  
800  
350  
PD  
Thermal Resistance Junction-to-Ambient @ Steady State B  
Junction and Storage Temperature Range  
RθJA  
357  
TJ ,TSTG  
-55+150  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
BSS123  
F2  
B123.  
3000  
30000  
120000  
7“ reel  
1 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  

与BSS123W相关器件

型号 品牌 获取价格 描述 数据表
BSS123W_0711 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123W_1 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123W-7 DIODES

获取价格

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123W-7-F DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123WF2 YANGJIE

获取价格

Small Signal Field-Effect Transistor,
BSS123WQ DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
BSS123X YANGJIE

获取价格

SOT-563
BSS123Z UTC

获取价格

N-CH
BSS124 INFINEON

获取价格

SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSS124E6288 INFINEON

获取价格

Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Met