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BSS123W PDF预览

BSS123W

更新时间: 2024-02-19 18:32:36
品牌 Logo 应用领域
扬杰 - YANGJIE 开关光电二极管晶体管
页数 文件大小 规格书
6页 599K
描述
Small Signal Field-Effect Transistor,

BSS123W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:,针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
Samacsys Description:MOSFET N-CH 100V 0.17A SOT-323湿度敏感等级:1
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:NOT SPECIFIED

BSS123W 数据手册

 浏览型号BSS123W的Datasheet PDF文件第2页浏览型号BSS123W的Datasheet PDF文件第3页浏览型号BSS123W的Datasheet PDF文件第4页浏览型号BSS123W的Datasheet PDF文件第5页浏览型号BSS123W的Datasheet PDF文件第6页 
RoHS  
COMPLIANT  
BSS123W  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
100V  
ID  
200mA  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
5.0ohm  
5.5ohm  
General Description  
Trench Power MV MOSFET technology  
Voltage controlled small signal switch  
High density cell design for low RDS(ON)  
Fast Switching Speed  
Applications  
Small servo motor control  
Power MOSFET gate drivers  
Switching application  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
100  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
Drain Current  
VDS  
VGS  
±20  
V
TA=25@ Steady State  
TA=70@ Steady State  
200  
160  
ID  
mA  
mA  
mW  
/ W  
Pulsed Drain Current A  
Total Power Dissipation @ TA=25℃  
IDM  
800  
350  
PD  
Thermal Resistance Junction-to-Ambient @ Steady State B  
Junction and Storage Temperature Range  
RθJA  
357  
TJ ,TSTG  
-55+150  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
BSS123  
F2  
B123.  
3000  
30000  
120000  
7“ reel  
1 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  

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