生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.57 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 5.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS123W_0711 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS123W_1 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS123W-7 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
BSS123W-7-F | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS123WF2 | YANGJIE |
获取价格 |
Small Signal Field-Effect Transistor, | |
BSS123WQ | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET | |
BSS123X | YANGJIE |
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SOT-563 | |
BSS123Z | UTC |
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N-CH | |
BSS124 | INFINEON |
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SIPMOS Small-Signal Transistor (N channel Enhancement mode) | |
BSS124E6288 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Met |