Datasheet > BSS123Q

BSS123Q

更新时间： 2024-11-19 14:52:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	528K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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BSS123Q 数据手册

BSS123Q

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Gate Threshold Voltage

I_D

BV_DSS

R_DS(ON)

Low Input Capacitance

T_A= +25°C

Fast Switching Speed

Low Input/Output Leakage

0.17A

0.14A

6Ω @ V_GS= 10V

100V

High Drain-Source Voltage Rating

10Ω @ V_GS= 4.5V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

The BSS123Q is suitable for automotive applications

requiring specific change control; this part is AEC-Q101

qualified, PPAP capable, and manufactured in IATF 16949

certified facilities.

https://www.diodes.com/quality/product-definitions/

Mechanical Data

Description and Applications



Case: SOT23

This MOSFET is designed to meet the stringent requirements of

automotive applications. It is qualified to AEC-Q101, supported by a

PPAP and is ideal for use in:

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



Small Servo Motor Control

Power MOSFET Gate Drivers

Switching Applications



Weight: 0.008 grams (Approximate)

SOT23

Top View

Equivalent Circuit

Top View

Ordering Information (Note 4)

Part Number

Case

Packaging

BSS123Q-7

SOT23

3,000 / Tape & Reel

BSS123Q-13

SOT23

10,000 / Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

K23 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: I = 2021)

M = Month (ex: 9 = September)

Date Code Key

Year

2021

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

2032

Code

Aug

Sep

Oct

Nov

Dec

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

1 of 7

www.diodes.com

February 2021

BSS123Q

Document number: DS43455 Rev. 1 - 2

12 3 4 5 6 7

中文翻译

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与BSS123Q相关器件

型号	品牌	获取价格	描述	数据表
BSS123-Q1	ANBON	获取价格	SOT-23
BSS123Q-13-F	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Met
BSS123Q62702-S512	ETC	获取价格	TRANSISTOR SOT23 SMD MOSFET
BSS123Q-7-F	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Met
BSS123T	YANGJIE	获取价格	SOT-723
BSS123T/R	NXP	获取价格	TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET Ge
BSS123T1	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123T2	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123TA	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123TC	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met

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