BSS123W

更新时间： 2024-11-17 22:27:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	68K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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BSS123W 数据手册

BSS123W

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

High Drain-Source Voltage Rating

SOT-323

Dim

Min

0.25

1.15

2.00

Max

0.40

1.35

2.20

Mechanical Data

0.65 Nominal

Case: SOT-323, Molded Plastic

Plastic Material - UL Flammability Classification

Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking: K23 (See Page 3)

Weight: 0.006 grams (approx.)

0.30

1.20

1.80

0.0

0.40

1.40

2.20

0.10

1.00

0.40

0.18

8°

0.90

0.25

0.10

0°

Drain

Gate

All Dimensions in mm

Source

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

Value

100

Units

Drain-Source Voltage

V_DGR

100

Drain-Gate Voltage R_GS£ 20KW

Gate-Source Voltage

V_GSS

Continuous

±20

I_D

I_DM

Drain Current (Note 1)

Continuous

Pulsed

170

680

P_d

Total Power Dissipation (Note 1)

200

625

°C/W

°C

R_qJA

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

T_j, T_STG

-55 to +150

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

DS30368 Rev. 2 - 2

1 of 3

BSS123W

www.diodes.com

12 3

中文翻译

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