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BSS123TA PDF预览

BSS123TA

更新时间： 2024-02-08 04:23:41
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 122K
描述
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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BSS123TA 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：18 weeks 3 days风险等级：1.53
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：0.17 A最大漏源导通电阻：10 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

BSS123TA 数据手册

 浏览型号BSS123TA的Datasheet PDF文件第2页浏览型号BSS123TA的Datasheet PDF文件第3页 
BSS123  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
High Drain-Source Voltage Rating  
•
•
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2 and 4)  
•
•
•
•
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
Drain  
SOT-23  
D
Gate  
G
S
Source  
TOP VIEW  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
Value  
100  
Units  
V
V
V
100  
Drain-Gate Voltage RGS ≤ 20KΩ  
Gate-Source Voltage  
Continuous  
±20  
170  
680  
Drain Current (Note 1)  
Continuous  
Pulsed  
mA  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Pd  
Rθ  
Value  
300  
Units  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Drain-Source Breakdown Voltage  
Symbol Min Typ Max Unit  
Test Condition  
VGS = 0V, ID = 250μA  
VDS = 100V, VGS = 0V  
VDS = 20V, VGS = 0V  
VGS = 20V, VDS = 0V  
100  
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
1.0  
10  
µA  
nA  
Zero Gate Voltage Drain Current  
Gate-Body Leakage, Forward  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
50  
nA  
IGSSF  
⎯
0.8  
1.4  
2.0  
V
VGS(th)  
VDS = VGS, ID = 1mA  
VGS = 10V, ID = 0.17A  
VGS = 4.5V, ID = 0.17A  
VDS = 10V, ID = 0.17A, f = 1.0KHz  
VGS = 0V, IS = 0.34A  
⎯
⎯
80  
⎯
⎯
370  
6.0  
10  
Static Drain-Source On-Resistance  
RDS (ON)  
Ω
Forward Transconductance  
Drain-Source Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
mS  
V
gFS  
VSD  
⎯
0.84 1.3  
⎯
29  
10  
2
60  
15  
6
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
Output Capacitance  
pF VDS = 25V, VGS = 0V, f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Rise Time  
Turn-Off Fall Time  
Turn-On Delay Time  
8
16  
8
ns  
ns  
tr  
tf  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.28A,  
ns RGEN = 50Ω, VGS = 10V  
tD(ON)  
tD(OFF)  
Turn-Off Delay Time  
13  
ns  
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code  
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
May 2008  
© Diodes Incorporated  
BSS123  
Document number: DS30366 Rev.8 - 2  
123

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BSS123TA 替代型号

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