是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.75 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.17 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.36 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS123T1 | CALOGIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met |
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BSS123T2 | CALOGIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met |
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BSS123TA | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met |
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BSS123TC | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met |
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BSS123TRL | NXP |
获取价格 |
TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S |
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BSS123TRL13 | NXP |
获取价格 |
TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S |
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BSS123W | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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BSS123W | YANGJIE |
获取价格 |
Small Signal Field-Effect Transistor, |
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BSS123W | ONSEMI |
获取价格 |
N 沟道逻辑电平增强型场效应晶体管 100V,0.17A,6Ω |
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BSS123W | MCC |
获取价格 |
Tape: 3K/Reel, 120K/Ctn.; |
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