Datasheet > BSS123LT1/D

BSS123LT1/D

更新时间： 2024-11-17 23:35:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	67K
描述
TMOS FET Transistor

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中文翻译

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数据手册

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BSS123LT1/D 数据手册

BSS123LT1

Preferred Device

Power MOSFET

170 mAmps, 100 Volts

N–Channel SOT–23

MAXIMUM RATINGS

http://onsemi.com

Rating

Symbol

Value

Unit

Drain–Source Voltage

100

Vdc

170 mAMPS

100 VOLTS

DSS

Gate–Source Voltage

– Continuous

±20

±40

Vdc

Vpk

= 6 W

DS(on)

– Non–repetitive (t ≤ 50 µs)

GSM

N–Channel

Drain Current

Continuous (Note 1.)

Pulsed (Note 2.)

Adc

0.17

0.68

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5

Board (Note 3.)

225

= 25°C

1.8

556

mW/°C

°C/W

°C

Derate above 25°C

Thermal Resistance, Junction to

Ambient

qJA

MARKING

DIAGRAM

Junction and Storage Temperature

T , T

J stg

–55 to +150

1. The Power Dissipation of the package may result in a lower continuous drain

current.

SOT–23

CASE 318

STYLE 21

2. Pulse Width v 300 ms, Duty Cycle v 2.0%.

3. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

= Device Code

= Work Week

PIN ASSIGNMENT

Drain

Gate

Source

ORDERING INFORMATION

Device

Package

Shipping

BSS123LT1

BSS123LT3

SOT–23

3000 Tape & Reel

10,000 Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

February, 2001 – Rev. 3

BSS123LT1/D

12 3 4 5 6 7 8

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