生命周期: | Active | 零件包装代码: | SC-73 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 4 weeks | 风险等级: | 0.83 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 45 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 2000 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 功耗环境最大值: | 1.5 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 1.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP60_07 | INFINEON |
获取价格 |
PNP Silicon Darlington Transistor |
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BSP603S2L | INFINEON |
获取价格 |
OptiMOS Power-Transistor |
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BSP603S2LHUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Met |
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BSP60BSP62 | INFINEON |
获取价格 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturatio |
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BSP60-E6433 | INFINEON |
获取价格 |
Transistor |
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BSP60-T | NXP |
获取价格 |
TRANSISTOR 0.5 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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BSP60T/R | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 45V V(BR)CEO | 2A I(C) | SOT-223 |
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BSP60-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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BSP60-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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BSP60TRL | NXP |
获取价格 |
TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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