Datasheet > BSP613PH6327

BSP613PH6327

更新时间： 2024-01-20 10:02:08

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	382K
描述
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

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BSP613PH6327 数据手册

BSP613P

SIPMOS Small-Signal-Transistor

Feature

Product Summary

-60

0.13

-2.9

Ω

• P-Channel

DS(on)

• Enhancement mode

• Avalanche rated

PG-SOT223

• dv/dt rated

• Ideal for fast switching buck converter

Drain

pin 2,4

Gate

pin1

• Qualified according to AEC Q101

Source

pin 3

•

Halogenfree according to IEC61249221

Type

BSP613P

Package

Tape and reel

Packaging

Marking

PG-SOT223

H6327: 1000pcs/r. Non Dry

BSP613P

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-2.9

-2.3

T =70°C

-11.6

Pulsed drain current

D puls

T =25°C

150

Avalanche energy, single pulse

I =2.9 A , V =-25V, R =25Ω

0.18

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I =2.9A, V =-48V, di/dt=-200A/µs, T

=150°C

jmax

Gate source voltage

Power dissipation

1.8

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

ESD Class

Class 1c

JESD22-A114-HBM

Rev.2.8

Page 1

2016-05-30

12 3 4 5 6 7...9

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