Datasheet > BSP60_07

BSP60_07

更新时间： 2024-09-23 09:00:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管达林顿晶体管
页数	文件大小	规格书
7页	103K
描述
PNP Silicon Darlington Transistor

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中文翻译

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数据手册

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BSP60_07 数据手册

BSP60-BSP62

PNP Silicon Darlington Transistor

• High collector current

• Low collector-emitter saturation voltage

• Complementary types: BSP50...BSP52 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

Pin Configuration

Package

SOT223

BSP60

BSP61

BSP62

BSP60 1=B 2=C 3=E

BSP61 1=B 2=C 3=E

BSP62 1=B 2=C 3=E

4=C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

BSP60

CEO

CBO

EBO

BSP61

BSP62

Collector-base voltage

BSP60

BSP61

BSP62

Emitter-base voltage

Collector current

Peak collector current

Base current

100

1.5

Total power dissipation-

tot

T ≤ 124 °C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

¹Pb-containing package may be available upon special request

2007-04-26

12 3 4 5 6 7

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