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BSP61-E6433 PDF预览

BSP61-E6433

更新时间: 2024-12-01 03:15:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 101K
描述
Transistor

BSP61-E6433 数据手册

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BSP60-BSP62  
PNP Silicon Darlington Transistor  
High collector current  
4
3
Low collector-emitter saturation voltage  
Complementary types: BSP50...BSP52 (NPN)  
2
1
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
Pin Configuration  
Package  
SOT223  
SOT223  
SOT223  
BSP60  
BSP61  
BSP62  
BSP60 1=B 2=C 3=E  
BSP61 1=B 2=C 3=E  
BSP62 1=B 2=C 3=E  
4=C  
4=C  
4=C  
-
-
-
-
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BSP60  
V
V
V
CEO  
CBO  
EBO  
45  
60  
80  
BSP61  
BSP62  
Collector-base voltage  
BSP60  
60  
80  
90  
BSP61  
BSP62  
5
1
Emitter-base voltage  
Collector current  
A
I
C
2
Peak collector current  
Base current  
I
CM  
100  
1.5  
mA  
W
I
B
Total power dissipation-  
P
tot  
T 124 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1Pb-containing package may be available upon special request  
1
2007-04-26  

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