Datasheet > BSP612PH6327XTSA1

BSP612PH6327XTSA1

更新时间： 2024-12-01 03:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	497K
描述
Small Signal Field-Effect Transistor,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP612PH6327XTSA1 数据手册

浏览型号BSP612PH6327XTSA1的Datasheet PDF文件第2页

浏览型号BSP612PH6327XTSA1的Datasheet PDF文件第3页

浏览型号BSP612PH6327XTSA1的Datasheet PDF文件第4页

浏览型号BSP612PH6327XTSA1的Datasheet PDF文件第5页

浏览型号BSP612PH6327XTSA1的Datasheet PDF文件第6页

BSP612P

OptiMOS™-P Small-Signal-Transistor

Features

Product Summary

V_DS

-60

120

170

-3

• P-channel

R_DS(on),max

V_GS=10 V

V_GS=4.5 V

• Enhancement mode

• Logic level (4.5V rated)

I_D

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to AEC61249-2-21

PG-SOT-223

Type

Package

SOT223

Tape and Reel Information

H6327: 1000 pcs/ reel

Halogen Free

Yes

Packing

Non dry

Marking

BSS612P

BSP612P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

-3.0

-2.44

-12

I _D,pulse

Pulsed drain current

I _D=-3 A,

E_AS

V_DD=-25V,

R _GS= 25Ω

Avalanche energy, single pulse

150

I _D=-3 A, V_DS=-48 V,

di/dt =200 A/µs,

T _j,max=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

V_GS

Gate source voltage

±20

1.8

Power dissipation¹⁾

P_tot

T _A=25 °C

°C

T _j, T _stg

Operating and storage temperature

ESD Class

-55 ... 150

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category; DIN IEC 68-1

260 °C

55/150/56

°C

Rev 2.0

page 1

2015-10-07

12 3 4 5 6 7...9

中文翻译

下载PDF

与BSP612PH6327XTSA1相关器件

型号	品牌	获取价格	描述	数据表
BSP613P	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP613P	KEXIN	获取价格	P-Channel MOSFET
BSP613P_07	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP613PH6327	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP613PH6327XTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP613PL6327	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP615S2L	INFINEON	获取价格	OptiMOS Power-Transistor
BSP61-E6433	INFINEON	获取价格	Transistor
BSP61-T	NXP	获取价格	TRANSISTOR 0.5 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP61T/R	NXP	获取价格	TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BI