Datasheet > BSP612PH6327XTSA1

BSP612PH6327XTSA1

更新时间： 2024-09-24 03:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	497K
描述
Small Signal Field-Effect Transistor,

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BSP612PH6327XTSA1 数据手册

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BSP612P

OptiMOS™-P Small-Signal-Transistor

Features

Product Summary

V_DS

-60

120

170

-3

• P-channel

R_DS(on),max

V_GS=10 V

V_GS=4.5 V

• Enhancement mode

• Logic level (4.5V rated)

I_D

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to AEC61249-2-21

PG-SOT-223

Type

Package

SOT223

Tape and Reel Information

H6327: 1000 pcs/ reel

Halogen Free

Yes

Packing

Non dry

Marking

BSS612P

BSP612P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

-3.0

-2.44

-12

I _D,pulse

Pulsed drain current

I _D=-3 A,

E_AS

V_DD=-25V,

R _GS= 25Ω

Avalanche energy, single pulse

150

I _D=-3 A, V_DS=-48 V,

di/dt =200 A/µs,

T _j,max=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

V_GS

Gate source voltage

±20

1.8

Power dissipation¹⁾

P_tot

T _A=25 °C

°C

T _j, T _stg

Operating and storage temperature

ESD Class

-55 ... 150

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category; DIN IEC 68-1

260 °C

55/150/56

°C

Rev 2.0

page 1

2015-10-07

12 3 4 5 6 7...9

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