是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 300 V | 最大漏极电流 (Abs) (ID): | 0.325 A |
最大漏极电流 (ID): | 0.325 A | 最大漏源导通电阻: | 17 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 4 W | 最大功率耗散 (Abs): | 4 W |
最大脉冲漏极电流 (IDM): | 1.3 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP255115 | NXP |
获取价格 |
TRANSISTOR 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP255135 | NXP |
获取价格 |
TRANSISTOR 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP-255310 | MINI |
获取价格 |
Band Stop Filter | |
BSP-255310+ | MINI |
获取价格 |
Band Stop Filter | |
BSP255T/R | NXP |
获取价格 |
TRANSISTOR 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP280 | INFINEON |
获取价格 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail cu | |
BSP295 | INFINEON |
获取价格 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
BSP295_07 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSP295E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
BSP295E-6327 | INFINEON |
获取价格 |
1.8A, 50V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN |