BSC030P03NS3GXT

更新时间： 2024-09-25 13:05:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	307K
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中文翻译

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数据手册

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BSC030P03NS3GXT 数据手册

BSC030P03NS3 G

OptiMOS^TMP3 Power-Transistor

Product Summary

Features

V _DS

-30

3.0

• single P-Channel in SuperSO8

• Qualified according JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

-100

• V _GS=25 V, specially suited for notebook applications

PG-TDSON-8

• Pb-free; RoHS compliant

• ESD > 4 kV

• applications: battery management, load switching

• Halogen-free according to IEC61249-2-21

Marking

Lead free

Halogen free

Type

Package

Packing

Yes

030P3NS

Yes

dry

BSC030P03NS3 G PG-TDSON-8

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=70 °C

T _A=25 °C

T _C=25 °C³⁾

-100

-25.4

-200

Continuous drain current

I _D,pulse

E _AS

Pulsed drain current

I _D=-100 A, R _GS=25 Ω

345

Avalanche energy, single pulse

V _GS

P _tot

±25

125

Gate source voltage

Power dissipation

T _C=25 °C

T _A=25 °C²⁾

2.5

T _j, T _stg

-55 ... 150

class 3 (> 4KV)

260 °C

Operating and storage temperature

ESD class

°C

JESD22-A114 HBM

Soldering temperature

55/150/56

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

Rev. 2.1

page 1

2009-11-16

12 3 4 5 6 7...9

中文翻译

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