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BSC031N06NS3G PDF预览

BSC031N06NS3G

更新时间: 2024-09-25 06:44:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 325K
描述
OptiMOS3 Power-Transistor

BSC031N06NS3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, PLASTIC, TDSON-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
雪崩能效等级(Eas):298 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.0031 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):139 W最大脉冲漏极电流 (IDM):400 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSC031N06NS3G 数据手册

 浏览型号BSC031N06NS3G的Datasheet PDF文件第2页浏览型号BSC031N06NS3G的Datasheet PDF文件第3页浏览型号BSC031N06NS3G的Datasheet PDF文件第4页浏览型号BSC031N06NS3G的Datasheet PDF文件第5页浏览型号BSC031N06NS3G的Datasheet PDF文件第6页浏览型号BSC031N06NS3G的Datasheet PDF文件第7页 
BSC031N06NS3 G  
OptiMOSTM3 Power-Transistor  
Features  
Product Summary  
V DS  
60  
3.1  
100  
V
• Ideal for high frequency switching and sync. rec.  
• Optimized technology for DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance RDS(on)  
R DS(on),max  
I D  
m  
A
• Superior thermal resistance  
• N-channel, normal level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
• Halogen-free according to IEC61249-2-21  
Type  
BSC031N06NS3 G  
Package  
Marking  
PG-TDSON-8  
031N06NS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
GS=10 V, T C=25 °C2)  
GS=10 V, T C=100 °C  
I D  
Continuous drain current  
100  
100  
A
V
V
V
R
GS=10 V, T C=25 °C,  
22  
thJA =50K/W3)  
Pulsed drain current4)  
I D,pulse  
E AS  
T C=25 °C  
400  
298  
±20  
Avalanche energy, single pulse5)  
I D=50 A, R GS=25 Ω  
mJ  
V
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
2) Current is limited by bondwire; with anR thJC=0.9 K/W the chip is able to carry 165A.  
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
4) See figure 3 for more detailed information  
5) See figure 13 for more detailed information  
Rev.2.3  
page 1  
2009-10-22  

BSC031N06NS3G 替代型号

型号 品牌 替代类型 描述 数据表
SI7164DP-T1-GE3 VISHAY

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