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BSC032N03SG PDF预览

BSC032N03SG

更新时间: 2024-11-05 06:44:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 375K
描述
OptiMOS™2 Power-Transistor

BSC032N03SG 数据手册

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BSC032N03S G  
OptiMOS™2 Power-Transistor  
Product Summary  
V DS  
30  
3.2  
V
Features  
R DS(on),max  
I D  
m  
A
• Fast switching MOSFET for SMPS  
• Optimized technology for notebook DC/DC converters  
• Qualified according to JEDEC1 for target applications  
100  
PG-TDSON-8  
• Logic level / N-channel  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• Avalanche rated; dv/dt rated  
• Pb-free lead plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSC032N03S G  
PG-TDSON-8  
32N03S  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
Continuous drain current  
100  
77  
A
T C=100 °C  
T A=25 °C,  
R
23  
thJA=45 K/W2)  
T C=25 °C3)  
I D,pulse  
E AS  
Pulsed drain current  
200  
550  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=150 °C  
V GS  
P tot  
Gate source voltage  
Power dissipation  
±20  
78  
V
T C=25 °C  
T A=25 °C,  
W
2.8  
R
thJA=45 K/W2)  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
Rev. 1.64  
page 1  
2009-10-22  

BSC032N03SG 替代型号

型号 品牌 替代类型 描述 数据表
BSC032N03S INFINEON

完全替代

OptiMOS2 Power-Transistor

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