5秒后页面跳转
BSC035N10NS5 PDF预览

BSC035N10NS5

更新时间: 2024-09-26 11:15:23
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 1466K
描述
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.

BSC035N10NS5 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.69雪崩能效等级(Eas):300 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F5湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):400 A表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSC035N10NS5 数据手册

 浏览型号BSC035N10NS5的Datasheet PDF文件第2页浏览型号BSC035N10NS5的Datasheet PDF文件第3页浏览型号BSC035N10NS5的Datasheet PDF文件第4页浏览型号BSC035N10NS5的Datasheet PDF文件第5页浏览型号BSC035N10NS5的Datasheet PDF文件第6页浏览型号BSC035N10NS5的Datasheet PDF文件第7页 
BSC035N10NS5  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
PG-TDSON-8  
8
5
7
6
Features  
6
7
5
4
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀresistance  
Pin 1  
•ꢀN-channel  
2
3
3
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
2
4
1
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Drain  
Pin 5-8  
Parameter  
Value  
100  
3.5  
Unit  
VDS  
V
*1  
Gate  
Pin 4  
RDS(on),max  
ID  
m  
A
155  
91  
Source  
Pin 1-3  
*1: Internal body diode  
Qoss  
nC  
nC  
QG(0V..10V)  
70  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSC035N10NS5  
PG-TDSON-8  
035N10NS  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.5,ꢀꢀ2022-09-05  

与BSC035N10NS5相关器件

型号 品牌 获取价格 描述 数据表
BSC035N10NS5ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon,
BSC036NE7NS3 G INFINEON

获取价格

75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具
BSC037N025S INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
BSC037N025SG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
BSC037N025SG_09 INFINEON

获取价格

OptiMOS?2 Power-Transistor
BSC037N03LSCG INFINEON

获取价格

Power Field-Effect Transistor, 21A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Me
BSC037N03LSCGATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 21A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Me
BSC037N03MSCG INFINEON

获取价格

Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me
BSC037N03MSCGATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me
BSC037N08NS5 INFINEON

获取价格

OptiMOS™ 5 80 V power MOSFET, especially desi