生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F5 |
Reach Compliance Code: | compliant | 风险等级: | 5.68 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 280 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.0065 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F5 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 200 A |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
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