5秒后页面跳转
BSC042N03SGXT PDF预览

BSC042N03SGXT

更新时间: 2024-09-25 13:05:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
10页 379K
描述
Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSC042N03SGXT 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code:compliant风险等级:5.68
Is Samacsys:N其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):280 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.0065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):200 A
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSC042N03SGXT 数据手册

 浏览型号BSC042N03SGXT的Datasheet PDF文件第2页浏览型号BSC042N03SGXT的Datasheet PDF文件第3页浏览型号BSC042N03SGXT的Datasheet PDF文件第4页浏览型号BSC042N03SGXT的Datasheet PDF文件第5页浏览型号BSC042N03SGXT的Datasheet PDF文件第6页浏览型号BSC042N03SGXT的Datasheet PDF文件第7页 
BSC042N03LS G  
Product Summary  
OptiMOS™3 Power-MOSFET  
Features  
V DS  
30  
4.2  
93  
V
R DS(on),max  
I D  
m  
A
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
PG-TDSON-8  
• N-channel; Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSC042N03LS G  
PG-TDSON-8  
042N03LS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
93  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
A
GS=10 V, T C=100 °C  
59  
V
V
GS=4.5 V, T C=25 °C  
75  
48  
GS=4.5 V,  
T C=100 °C  
V
R
GS=10 V, T A=25 °C,  
20  
thJA=50 K/W2)  
Pulsed drain current3)  
I D,pulse  
I AS  
T C=25 °C  
372  
50  
Avalanche current, single pulse4)  
T C=25 °C  
E AS  
I D=40 A, R GS=25 Ω  
Avalanche energy, single pulse  
50  
mJ  
I D=50 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
T
j,max=150 °C  
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
Rev. 1.25  
page 1  
2009-10-22  

与BSC042N03SGXT相关器件

型号 品牌 获取价格 描述 数据表
BSC042NE7NS3 G INFINEON

获取价格

75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具
BSC042NE7NS3G INFINEON

获取价格

OptiMOS3 Power-Transistor
BSC043N03MSCG INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me
BSC043N03MSCGATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me
BSC046N02KS G INFINEON

获取价格

Infineon’s innovative products serve the mark
BSC046N02KSG INFINEON

获取价格

OptiMOS™2 Power-Transistor
BSC046N02KSGAUMA1 INFINEON

获取价格

Power Field-Effect Transistor, 19A I(D), 20V, 0.0046ohm, 1-Element, N-Channel, Silicon, Me
BSC047N08NS3 G INFINEON

获取价格

OptiMOS? 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源
BSC047N08NS3G INFINEON

获取价格

OptiMOS3 Power-Transistor
BSC047N08NS3GATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Me