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BSC043N03MSCGATMA1 PDF预览

BSC043N03MSCGATMA1

更新时间: 2024-09-25 14:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 294K
描述
Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSC043N03MSCGATMA1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
雪崩能效等级(Eas):35 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):17 A最大漏源导通电阻:0.0056 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):348 A
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSC043N03MSCGATMA1 数据手册

 浏览型号BSC043N03MSCGATMA1的Datasheet PDF文件第2页浏览型号BSC043N03MSCGATMA1的Datasheet PDF文件第3页浏览型号BSC043N03MSCGATMA1的Datasheet PDF文件第4页浏览型号BSC043N03MSCGATMA1的Datasheet PDF文件第5页浏览型号BSC043N03MSCGATMA1的Datasheet PDF文件第6页浏览型号BSC043N03MSCGATMA1的Datasheet PDF文件第7页 
BSC043N03MSC G  
OptiMOS™3 M-Series Power-MOSFET  
Product Summary  
Features  
V DS  
30  
4.3  
5.6  
87  
V
• Optimized for 5V driver application (Notebook, VGA, POL)  
• Low FOMSW for High Frequency SMPS  
• 100% avalanche tested  
R DS(on),max  
V
V
GS=10 V  
GS=4.5 V  
m  
I D  
A
• Improved switching behaviour  
PG-TDSON-8  
• N-channel  
• Very low on-resistance R DS(on) @ V GS=4.5 V  
• Excellent gate charge x R DS(on) product (FOM)  
• Qualified according to JEDEC1) for target applications  
• Superior thermal resistance  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSC043N03MSC G  
PG-TDSON-8  
043N03MS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
87  
55  
A
GS=10 V, T C=100 °C  
V
V
GS=4.5 V, T C=25 °C  
76  
48  
GS=4.5 V,  
T C=100 °C  
V
R
GS=4.5 V, T A=25 °C,  
17  
thJA=50 K/W2)  
Pulsed drain current3)  
I D,pulse  
I AS  
T C=25 °C  
348  
50  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
T C=25 °C  
E AS  
V GS  
I D=40 A, R GS=25 Ω  
35  
mJ  
V
±20  
1) J-STD20 and JESD22  
Rev. 2.2  
page 1  
2009-10-22  

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