型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC035N04LSG | INFINEON |
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OptiMOS3 Power-Transistor | |
BSC035N04LSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 21A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me | |
BSC035N10NS5 | INFINEON |
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Infineon’s OptiMOS™ 5 industrial power MOSFET | |
BSC035N10NS5ATMA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, | |
BSC036NE7NS3 G | INFINEON |
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75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具 | |
BSC037N025S | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
BSC037N025SG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
BSC037N025SG_09 | INFINEON |
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OptiMOS?2 Power-Transistor | |
BSC037N03LSCG | INFINEON |
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Power Field-Effect Transistor, 21A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Me | |
BSC037N03LSCGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Me |