Datasheet > BSC032N03S_09

BSC032N03S_09

更新时间： 2024-11-05 06:44:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	375K
描述
OptiMOS™2 Power-Transistor

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数据手册

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BSC032N03S_09 数据手册

BSC032N03S G

OptiMOS™2 Power-Transistor

Product Summary

V _DS

3.2

Features

R _DS(on),max

I _D

mΩ

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC¹for target applications

100

PG-TDSON-8

• Logic level / N-channel

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• Avalanche rated; dv/dt rated

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC032N03S G

PG-TDSON-8

32N03S

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

100

T _C=100 °C

T _A=25 °C,

_thJA=45 K/W²⁾

T _C=25 °C³⁾

I _D,pulse

E _AS

Pulsed drain current

200

550

I _D=50 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

P _tot

Gate source voltage

Power dissipation

±20

T _C=25 °C

T _A=25 °C,

2.8

_thJA=45 K/W²⁾

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Rev. 1.64

page 1

2009-10-22

12 3 4 5 6 7...10

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