是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | GREEN, PLASTIC, TDSON-8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 0.85 |
雪崩能效等级(Eas): | 70 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 25 A | 最大漏源导通电阻: | 0.0032 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F5 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 400 A | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC022N04LS6 | INFINEON |
获取价格 |
The OptiMOS™ 6 power MOSFET 40V family is opt | |
BSC022N04LSATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Me | |
BSC023N08NS5SC | INFINEON |
获取价格 |
OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC | |
BSC024N025S | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
BSC024N025SG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
BSC024N025SG_09 | INFINEON |
获取价格 |
OptiMOS™2 Power-Transistor | |
BSC024N025SGAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 25V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
BSC024NE2LS | INFINEON |
获取价格 |
n-Channel Power MOSFET | |
BSC025N03LSG | INFINEON |
获取价格 |
OptiMOS™3 Power-MOSFET | |
BSC025N03LSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me |