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BSC027N03SG PDF预览

BSC027N03SG

更新时间: 2024-11-20 03:22:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
10页 372K
描述
OptiMOS㈢2 Power-Transistor

BSC027N03SG 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:GREEN, PLASTIC, TDSON-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.8Is Samacsys:N
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):800 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):25 A最大漏源导通电阻:0.0039 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:3
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):89 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSC027N03SG 数据手册

 浏览型号BSC027N03SG的Datasheet PDF文件第2页浏览型号BSC027N03SG的Datasheet PDF文件第3页浏览型号BSC027N03SG的Datasheet PDF文件第4页浏览型号BSC027N03SG的Datasheet PDF文件第5页浏览型号BSC027N03SG的Datasheet PDF文件第6页浏览型号BSC027N03SG的Datasheet PDF文件第7页 
BSC027N03S G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
30  
2.7  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for notebook DC/DC converters  
• Qualified according to JEDEC1 for target applications  
R DS(on),max  
I D  
m  
A
100  
• Logic level / N-channel  
• Excellent gate charge x R DS(on) product (FOM)  
PG-TDSON-8  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• Avalanche rated  
• dv /dt rated  
• Pb-free lead plating; RoHS compliant  
Type  
Package  
Marking  
BSC027N03S  
PG-TDSON-8  
27N03S  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
Continuous drain current  
100  
90  
A
T C=100 °C  
T A=25 °C,  
R
25  
thJA=45 K/W2)  
T C=25 °C3)  
I D,pulse  
E AS  
Pulsed drain current  
200  
800  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=150 °C  
V GS  
P tot  
Gate source voltage  
Power dissipation  
±20  
89  
V
T C=25 °C  
T A=25 °C,  
W
2.8  
R
thJA=45 K/W2)  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
Rev. 0.93  
page 1  
2006-05-09  

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