是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | GREEN, PLASTIC, TDSON-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.8 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 800 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 100 A |
最大漏极电流 (ID): | 25 A | 最大漏源导通电阻: | 0.0039 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F5 |
JESD-609代码: | e3 | 湿度敏感等级: | 3 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 89 W |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC027N04LS G | INFINEON |
获取价格 |
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和 | |
BSC027N04LSG | INFINEON |
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OptiMOS™3 Power-Transistor | |
BSC027N04LSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Me | |
BSC027N06LS5 | INFINEON |
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Power Field-Effect Transistor | |
BSC027N06LS5ATMA1 | INFINEON |
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Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Me | |
BSC027N10NS5 | INFINEON |
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Infineon's OptiMOS™ MOSFETs in SuperSO8 packa | |
BSC028N03LSCG | INFINEON |
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Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me | |
BSC028N03LSCGATMA1 | INFINEON |
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Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me | |
BSC028N03MSCG | INFINEON |
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Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me | |
BSC028N03MSCGATMA1 | INFINEON |
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Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me |