是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TDSON-8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 26 weeks |
风险等级: | 0.85 | 雪崩能效等级(Eas): | 70 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 25 A |
最大漏源导通电阻: | 0.0032 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 400 A |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC023N08NS5SC | INFINEON |
获取价格 |
OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC | |
BSC024N025S | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
BSC024N025SG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
BSC024N025SG_09 | INFINEON |
获取价格 |
OptiMOS™2 Power-Transistor | |
BSC024N025SGAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 25V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
BSC024NE2LS | INFINEON |
获取价格 |
n-Channel Power MOSFET | |
BSC025N03LSG | INFINEON |
获取价格 |
OptiMOS™3 Power-MOSFET | |
BSC025N03LSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me | |
BSC025N03MS G | INFINEON |
获取价格 |
极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS? 25V 成 | |
BSC025N03MSG | INFINEON |
获取价格 |
OptiMOS™3 M-Series Power-MOSFET |