型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC024N025S | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
BSC024N025SG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
BSC024N025SG_09 | INFINEON |
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OptiMOS™2 Power-Transistor | |
BSC024N025SGAUMA1 | INFINEON |
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Power Field-Effect Transistor, 27A I(D), 25V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
BSC024NE2LS | INFINEON |
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n-Channel Power MOSFET | |
BSC025N03LSG | INFINEON |
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OptiMOS™3 Power-MOSFET | |
BSC025N03LSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me | |
BSC025N03MS G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS? 25V 成 | |
BSC025N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSC025N03MSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Met |