Datasheet > BSC026N08NS5

BSC026N08NS5

更新时间： 2024-11-06 11:15:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1280K
描述
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

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BSC026N08NS5 数据手册

BSC026N08NS5

MOSFET

OptiMOS^TM5ꢀPower-Transistor,ꢀ80ꢀV

PG-TDSON-8

Features

•ꢀOptimizedꢀforꢀSynchronousꢀRectificationꢀinꢀserverꢀandꢀdesktop

•ꢀ100%ꢀavalancheꢀtested

•ꢀSuperiorꢀthermalꢀresistance

Pin 1

•ꢀN-channel

•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC¹⁾ꢀꢀforꢀtargetꢀapplications

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Drain

Pin 5-8

Parameter

Value

Unit

V_DS

Gate

Pin 4

R_DS(on),max

I_D

2.6

184

mΩ

Source

Pin 1-3

*1: Internal body diode

Q_oss

Q_G(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

BSC026N08NS5

PG-TDSON-8

026N08NS

¹⁾J-STD20 and JESD22

Final Data Sheet

Rev.ꢀ2.3,ꢀꢀ2022-09-23

12 3 4 5 6 7...11

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