生命周期: | Active | 包装说明: | GREEN, PLASTIC, TDSON-8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.76 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 800 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (ID): | 27 A |
最大漏源导通电阻: | 0.0037 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 200 A | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC024NE2LS | INFINEON |
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n-Channel Power MOSFET | |
BSC025N03LSG | INFINEON |
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OptiMOS™3 Power-MOSFET | |
BSC025N03LSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me | |
BSC025N03MS G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS? 25V 成 | |
BSC025N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSC025N03MSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Met | |
BSC025N03MSGXT | INFINEON |
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Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Met | |
BSC025N08LS5 | INFINEON |
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Power Field-Effect Transistor, | |
BSC026N02KS G | INFINEON |
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Infineon’s innovative products serve the mark | |
BSC026N02KSG | INFINEON |
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OptiMOS™2 Power-Transistor |