BSC024N025S

更新时间： 2024-11-20 03:02:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	406K
描述
OptiMOS㈢2 Power-Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSC024N025S 数据手册

BSC024N025S G

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

2.4

100

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC¹for target applications

R _DS(on),max

I _D

mΩ

• Logic level / N-channel

• Excellent gate charge x R _DS(on)product (FOM)

PG-TDSON-8

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• Avalanche rated

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Type

Package

Ordering Code

Marking

BSC024N025S G

PG-TDSON-8

24N025S

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

100

T _C=100 °C

T _A=25 °C,

_thJA=45 K/W²⁾

T _C=25 °C³⁾

I _D,pulse

E _AS

Pulsed drain current

200

800

I _D=50 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

P _tot

Gate source voltage

Power dissipation

±20

T _C=25 °C

T _A=25 °C,

2.8

_thJA=45 K/W²⁾

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Rev. 0.93

page 1

2006-02-24

12 3 4 5 6 7...10

中文翻译

下载PDF

与BSC024N025S相关器件

型号	品牌	获取价格	描述	数据表
BSC024N025SG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
BSC024N025SG_09	INFINEON	获取价格	OptiMOS™2 Power-Transistor
BSC024N025SGAUMA1	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 25V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
BSC024NE2LS	INFINEON	获取价格	n-Channel Power MOSFET
BSC025N03LSG	INFINEON	获取价格	OptiMOS™3 Power-MOSFET
BSC025N03LSGATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me
BSC025N03MS G	INFINEON	获取价格	极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS? 25V 成
BSC025N03MSG	INFINEON	获取价格	OptiMOS™3 M-Series Power-MOSFET
BSC025N03MSGATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Met
BSC025N03MSGXT	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Met