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BLF369,112 PDF预览

BLF369,112

更新时间: 2024-11-05 19:59:39
品牌 Logo 应用领域
恩智浦 - NXP 局域网放大器晶体管
页数 文件大小 规格书
17页 146K
描述
BLF369

BLF369,112 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:ROHS COMPLIANT, CERAMIC PACKAGE-4
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.76外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:65 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLF369,112 数据手册

 浏览型号BLF369,112的Datasheet PDF文件第2页浏览型号BLF369,112的Datasheet PDF文件第3页浏览型号BLF369,112的Datasheet PDF文件第4页浏览型号BLF369,112的Datasheet PDF文件第5页浏览型号BLF369,112的Datasheet PDF文件第6页浏览型号BLF369,112的Datasheet PDF文件第7页 
BLF369  
Multi-use VHF power LDMOS transistor  
Rev. 04 — 19 February 2009  
Product data sheet  
1. Product profile  
1.1 General description  
A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave  
applications in the HF/VHF band up to 500 MHz.  
Table 1.  
Typical performance  
Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit.[1]  
Mode of operation  
f
PL  
PL(PEP)  
Gp  
(dB)  
18  
ηD  
(%)  
60  
47  
55  
IMD3  
(MHz)  
(W)  
500  
-
(W)  
(dBc)  
CW, class AB  
225  
-
-
2-tone, class AB  
pulsed, class AB [2]  
f1 = 225; f2 = 225.1  
225  
500  
-
19  
28  
500  
19  
-
[1] Th is the heatsink temperature.  
[2] tp = 2 ms; δ = 10 %.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
I Typical pulsed performance at 225 MHz, a drain-source voltage VDS of 32 V and a  
quiescent drain current IDq = 2 × 1.0 A:  
N Load power PL = 500 W  
N Power gain Gp = 19 dB  
N Drain efficiency ηD = 55 %  
I Advanced flange material for optimum thermal behavior and reliability  
I Excellent ruggedness  
I High power gain  
I Designed for broadband operation (HF/VHF band)  
I Source on underside eliminates DC isolators, reducing common-mode inductance  
I Easy power control  
I Integrated ESD protection  
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS), using exemption No. 7 of the annex  
 
 
 
 
 

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