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BLF4G20LS-110B,112 PDF预览

BLF4G20LS-110B,112

更新时间: 2024-11-05 14:48:07
品牌 Logo 应用领域
恩智浦 - NXP 放大器晶体管
页数 文件大小 规格书
12页 112K
描述
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power

BLF4G20LS-110B,112 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLATPACK, R-CDFP-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFP-F2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLATPACK
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLF4G20LS-110B,112 数据手册

 浏览型号BLF4G20LS-110B,112的Datasheet PDF文件第2页浏览型号BLF4G20LS-110B,112的Datasheet PDF文件第3页浏览型号BLF4G20LS-110B,112的Datasheet PDF文件第4页浏览型号BLF4G20LS-110B,112的Datasheet PDF文件第5页浏览型号BLF4G20LS-110B,112的Datasheet PDF文件第6页浏览型号BLF4G20LS-110B,112的Datasheet PDF文件第7页 
BLF4G20LS-110B  
UHF power LDMOS transistor  
Rev. 01 — 10 January 2006  
Product data sheet  
1. Product profile  
1.1 General description  
110 W LDMOS power transistor for base station applications at frequencies from  
1800 MHz to 2000 MHz.  
Table 1:  
Typical performance  
f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB  
production test circuit; typical values  
Mode of operation  
VDS  
(V)  
PL  
(W)  
Gp  
(dB) (%)  
ηD  
ACPR400  
(dBc)  
ACPR600  
(dBc)  
EVMrms  
(%)  
CW  
28  
28  
100  
13.4 49  
13.8 38.5 61[1]  
-
-
-
GSM EDGE  
48 (AV)  
74 [2]  
2.1  
[1] ACPR400 at 30 kHz resolution bandwidth.  
[2] ACPR600 at 30 kHz resolution bandwidth.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a  
supply voltage of 28 V and an IDq of 650 mA:  
Load power = 48 W (AV)  
Gain = 13.8 dB (typ)  
Efficiency = 38.5 % (typ)  
ACPR400 = 61 dBc (typ)  
ACPR600 = 74 dBc (typ)  
EVMrms = 2.1 % (typ)  
Easy power control  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (1800 MHz to 2000 MHz)  
Internally matched for ease of use  
 
 
 
 
 

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