Datasheet > BLF4G20S-110B

BLF4G20S-110B

更新时间： 2024-11-05 06:42:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
14页	118K
描述
UHF power LDMOS transistor

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BLF4G20S-110B 数据手册

BLF4G20-110B;

BLF4G20S-110B

UHF power LDMOS transistor

Rev. 01 — 23 January 2006

Product data sheet

1. Product proﬁle

1.1 General description

110 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2000 MHz.

Table 1:

Typical performance

f = 1930 MHz to 1990 MHz; T_case= 25 °C; in a class-AB production test circuit.

Mode of operation

V_DS

(V)

P_L

(W)

G_p

(dB) (%)

(typ) (typ)

η_D

ACPR₄₀₀ACPR₆₀₀EVM_rms

(dBc)

(typ)

(dBc)

(typ)

(%)

(typ)

100

13.4 49

GSM EDGE

48 (AV)

13.8 38.5

−61^[1]

−74^[2]

2.1

[1] ACPR₄₀₀at 30 kHz resolution bandwidth.

[2] ACPR₆₀₀at 30 kHz resolution bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a

supply voltage of 28 V and an I_Dqof 650 mA:

◆ Load power = 48 W (AV)

◆ Gain = 13.8 dB (typ)

◆ Efﬁciency = 38.5 % (typ)

◆ ACPR₄₀₀= −61 dBc (typ)

◆ ACPR₆₀₀= −74 dBc (typ)

◆ EVM_rms= 2.1 % (typ)

■ Easy power control

■ Excellent ruggedness

■ High efﬁciency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

12 3 4 5 6 7...14

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