Datasheet > BLF4G20LS-130

BLF4G20LS-130

更新时间： 2022-10-17 06:10:59

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
11页	79K
描述
UHF power LDMOS transistor

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BLF4G20LS-130 数据手册

BLF4G20LS-130

UHF power LDMOS transistor

Rev. 01 — 1 June 2007

Product data sheet

1. Product proﬁle

1.1 General description

130 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2000 MHz.

Table 1.

Typical performance

T_case= 25 °C; I_Dq= 900 mA; unless otherwise speciﬁed; in a class-AB production test circuit.

Mode of operation

V_DS

(V)

P_L

P_L(AV)G_p

η_D

ACPR₄₀₀ACPR₆₀₀EVM_rmsIMD3

(MHz)

(W) (W)

(dB) (%) (dBc)

(dBc)

(%)

(dBc)

1930 to 1990

130

14.5 50

14.8 36

14.6 38.5

GSM EDGE

2-tone

−62^[1]

−73^[1]

2.1

−30

[1] ACPR₄₀₀and ACPR₆₀₀at 30 kHz resolution bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical GSM EDGE performance at frequencies of 1990 MHz, a supply voltage of 28 V

and an I_Dqof 900 mA:

N Average output power = 60 W

N Power gain = 14.8 dB

N Efﬁciency = 36 %

N ACPR₄₀₀= −62 dBc

N ACPR₆₀₀= −73 dBc

N EVM_rms= 2.1 %

I Easy power control

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation (1800 MHz to 2000 MHz)

I Internally matched for ease of use

12 3 4 5 6 7...11

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