BLF4G10-160

更新时间： 2024-11-05 08:58:11

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
14页	123K
描述
UHF power LDMOS transistor

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BLF4G10-160 数据手册

BLF4G10-160

UHF power LDMOS transistor

Rev. 01 — 22 June 2007

Product data sheet

1. Product proﬁle

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

800 MHz to 1000 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 °C in a common source class-AB test circuit.

Mode of operation

V_DSP_LP_L(AV)G_p

(MHz) (V) (W) (W) (dB) (%) (dBc)

19.0 59

η_D

ACPR₄₀₀ACPR₆₀₀ACPR₇₅₀ACPR₁₉₈₀EVM_rmsIMD3

(dBc)

(%)

(dBc)

894

28 200 -

2-tone

19.7 42.5 -

19.7 41.5 −61^[1]

−29

GSM EDGE

CDMA

−72^[1]

3.0

881.5 28

19.0 29.5 -

−45^[2]

−64^[2]

[1] ACPR₄₀₀and ACPR₆₀₀at 30 kHz resolution bandwidth.

[2] Test signal: IS-95, with PAR = 9.9 dB at 0.01 % probability.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical GSM EDGE performance at f = 894 MHz, V_DS= 28 V and I_Dq= 900 mA:

N Average output power = 80 W

N Gain = 19.7 dB

N Efﬁciency = 41.5 %

N ACPR₄₀₀= −61 dBc

N ACPR₆₀₀= −72 dBc

N EVM_rms= 3.0 %

I Easy power control

Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation (800 MHz to 1000 MHz)

I Internally matched for ease of use

12 3 4 5 6 7...14

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BLF4G10-160 替代型号

型号	品牌	替代类型	描述	数据表
BLF4G10LS-160	NXP	功能相似	UHF power LDMOS transistor
BLF4G10-120	NXP	功能相似	UHF power LDMOS transistor
BLF4G10LS-120	NXP	功能相似	UHF power LDMOS transistor

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