Datasheet > BLF3G22-30,135

BLF3G22-30,135

更新时间： 2024-11-05 19:39:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	99K
描述
BLF3G22-30

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BLF3G22-30,135 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DFM	针数：	2
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

BLF3G22-30,135 数据手册

BLF3G22-30

UHF power LDMOS transistor

Rev. 01 — 21 June 2007

Product data sheet

1. Product proﬁle

1.1 General description

30 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz

Table 1.

Typical class-AB RF performance

I_Dq= 450 mA; T_h= 25 °C in a common source test circuit.

Mode of operation

f₁

f₂

V_DSI_Dq

P_L(PEP)P_L(AV)G_p

η_D

IMD

ACPR IMD3

(MHz)

2170

2115

(MHz)

2170.1

2165

(V)

(mA) (W)

(W)

(dB) (%) (dBc) (dBc)

(dBc)

2-tone

2-carrier W-CDMA^[1]

450

−24

−42^[2]

−38

[1] 3GPP test model 1; 64 channels with 66 % clippings

[2] Measured within 10 kHz bandwidth

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Excellent back off linearity

I Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and I_Dqof 450 mA:

N Average output power = 6 W

N Gain = 15 dB

N Efﬁciency = 21 %

N ACPR = −42 dBc (at 3.84 MHz)

N IMD3 = −38 dBc

I Easy power control

I Excellent ruggedness

I High power gain

I Excellent thermal stability

I Designed for broadband operation (2000 MHz to 2200 MHz)

I Internally matched for ease of use

I ESD protection

12 3 4 5 6 7...13

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