Datasheet > BL8593

BL8593

更新时间： 2024-11-14 12:50:55

品牌	Logo	应用领域
上海贝岭 - BELLING		肖特基二极管
页数	文件大小	规格书
6页	495K
描述
P-Channel MOSFET with 0.12V Schottky Diode

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BL8593 数据手册

BL8593

P-Channel MOSFET with 0.12V Schottky Diode

DESCRIPTION

FEATURES



PMOSFET with SBD for reverse current blocking

0.12V Schottky diode forward voltage

Range of operation input voltage: Max 12V

Charging current up to 650mA

BL8593 is designed for battery charging controller,

which features P-channel MOSFET characteristics

and a 0.12V Schottky diode for reverse current

blocking. Such reverse current blocking feature cut

off the current when source voltage is removed, or

lower than drain voltage, no matter the gate

voltage indicating the P-MOSFET on or off.

Environment Temperature: -20C~85C

APPLICATIONS

BL8593 is also suitable for high side switch in a

system with multi power supplies, when isolating

different power supplies becomes essential.



Cell phone and other portable device

FUNCTION DIAGRAM

BL8593 can block reverse voltage as high as 10V. So

it is safe enough for mobile phone system or other

portable device powered by 1 cell Li-ion battery.

BL8593 is available in DFN2x2-6L (2 type of PIN

configuration), SC70-5 and DFN1x1-5. Especially

with the package DFN1x1-5, BL8593 make itself the

smallest package available in the world.

ORDERING INFORMATION / PIN CONFIGURATION / MARKING

BL8593CKCTR

DFN2x2-6L

BL8593CBKCTR

DFN2x2-6L

BL8593CA5TR

SC70-5

BL8593CKDTR

DFN1x1-5L

(compatible to DFN2x3

pin out)

(compatible to

DFN2x2 pin out)

1. A

6. K

1. S

5. NC

1. A

2. S

6. K

5. D

OA|

2. G

2. NC

5. G

4. S

3. NC

4. D

3. D

3. G

4. NC

Notice: YW means the year and week parts being manufactured, subjected to change. OA is the

code of the product, it will not be changed on any part.

www.belling.com.cn

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