Datasheet > BL8N60

BL8N60

更新时间： 2024-11-15 14:54:11

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	1291K
描述
BL8N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL8N60 数据手册

BL8N60

Power MOSFET

1．Description

BL8N60, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

650

Unit

R_DS(ON).Typ

FEATURES

0.85

Ω

TO-220

TO-220F



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

TO-251-3L

TO-252-2L

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL8N60-P

BL8N60-A

BL8N60-D

BL8N60-U

Package

Product Code

8N60

Packing

Tube

Tape Reel

Tube

TO-220

TO-220F

TO-252

TO-251

BL8N60-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BL8N60:600V 8A

(2) A:TO-220F P:TO-220

D:TO-252-2L U:TO-251

BL8N60

Rev 1.0

3/2020

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