Datasheet > BL8N40F

BL8N40F

更新时间： 2024-11-15 17:02:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	254K
描述
8A, 400V, 39W, N Channel, Power MOSFETs

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BL8N40F 数据手册

Product specification

N-Channel Enhancement Mode Field Effect Transistor

BL8N40F

FEATURES

RDS(ON) =1.2Ω@VGS = 10V.

Ultra Low gate charge (typical 28nC)

Low reverse transfer capacitance

(CRSS = typical 12.0 pF)

Lead-free

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL8N40F□

ITO-220AB

50/Tube

8N40F

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Drain-Source voltage

V_DS

V_GS

I_D

400

±30

Gate -Source voltage

Continuous Drain current T_C=25℃

Single Pulse Avalanche Energy(Note2)

Avalanche Energy,Repetitive(Note1)

Power Dissipation

E_AS

E_AR

320

2.5

P_D

W/°C

Derate above 25°C

0.312

3.18

62.5

R_θ

Junction-to-Case

℃/W

R_θ

Junction-to-Ambient

Junction and Storage Temperature

Maximum Temperature for Soldering

T_J, T_stg

T_L

-55 to +150

+150

℃

Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently

damaged.

Absolute maximum ratings are stress ratings only and functional device operation is nimplied.

2.Repetitive Rating: Pulse width limited by maximum junction temperature

MTM5017A

www.gmesemi.com

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