Datasheet > BL8N50D

BL8N50D

更新时间： 2024-11-15 17:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	723K
描述
8A, 500V, N Channel, Power MOSFETs

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中文翻译

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数据手册

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BL8N50D 数据手册

N-Channel Enhancement Mode MOSFET

BL8N50D

Features



Low R_DS(ON)

Fast switching

Low gate charge

Low Reverse transfer capacitances

HBM: JESD22-A114-B: 1B

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

TO-252

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

8N50D

BL8N50D

80 pcs / Tube or 2500 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

500

Gate-to-Source Voltage

V_GSS

±30

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

400

°C

100

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.9

1.25

°C /W

MTM0848A: February 2024 [2.0]

www.gmesemi.com

12 3 4 5 6

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