Datasheet > BL900P04

BL900P04

更新时间： 2024-11-15 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
7页	664K
描述
-40V, P Channel MOSFETs

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中文翻译

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数据手册

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BL900P04 数据手册

P-Channel Enhancement Mode MOSFET

BL900P04 BL900P04-3L

Features



Advanced Trench technology



Excellent R_DS(ON)and low gate charge

Mechanical Data



Case: SOT-23, SOT-23-3L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

BL900P04

SOT-23

BL900P04-3L

SOT-23-3L

Ordering Information

Part Number

BL900P04

Package

Shipping Quantity

Marking Code

900P04

SOT-23

3000 pcs / Tape & Reel

BL900P04-3L

SOT-23-3L

900P04

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-40

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C )

-3

I_D

-2.4

I_DM

-30

E_AS

°C

2.5

P_D

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

1.25

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

100

MTM0766A: December 2023 [2.2]

www.gmesemi.com

12 3 4 5 6 7

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