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BL8N65 PDF预览

BL8N65

更新时间: 2024-11-15 17:01:59
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
3页 322K
描述
8A, 650V, 110W, N Channel,Power MOSFETs

BL8N65 数据手册

 浏览型号BL8N65的Datasheet PDF文件第2页浏览型号BL8N65的Datasheet PDF文件第3页 
Product Specification  
N-Channel Enhancement Mode Field Effect Transistor  
BL8N65  
FEATURES  
RDS(ON) = 1.4Ω @ VGS = 10V  
Ultra low gate charge (typical 28nC)  
Low reverse transfer capacitance (CRSS = typical 12.0 pF)  
Fast switching capability  
Avalanche energy specified  
Improved dv/dt capability, high ruggedness  
TO-220AB  
Ordering Information  
Part Number  
Package  
Shipping  
Marking Code  
BL8N65  
TO-220AB  
50 pcs / Tube  
8N65  
MAXIMUM RATING operating temperature range applies unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Drain-Source voltage  
VDS  
650  
V
V
±30  
Gate -Source voltage  
VGS  
Continuous Drain current TC=25  
TC=100℃  
8
5.5  
ID  
A
Single Pulse Avalanche Energy(Note2)  
Avalanche Energy,Repetitive(Note1)  
Avalanche Current(Note2)  
EAS  
EAR  
600  
14.7  
8
mJ  
mJ  
A
IAR  
ISD  
Continuous Drain-Source Current  
Pulsed Drain-Source Current  
Peak Diode Recovery dv/dt(Note4)  
Power Dissipation  
8
A
ISM  
32  
A
dv/dt  
PD  
4.5  
V/ns  
W
110  
Rθ  
Junction-to-Case  
JC  
2.6  
/W  
/W  
Rθ  
Junction-to-Ambient  
JA  
62.5  
-55 to +150  
+150  
Junction and Storage Temperature  
Maximum Temperature for Soldering  
TJ, Tstg  
TL  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
MTM0177A  
www.gmesemi.com  
1

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