Datasheet > BL8N65F

BL8N65F

更新时间： 2024-04-09 19:00:01

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	256K
描述
8A, 650V, 110W, N Channel, Power MOSFETs

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BL8N65F 数据手册

Product specification

N-Channel Enhancement Mode Field Effect Transistor

BL8N65F

FEATURES

RDS(ON) =1.4Ω@VGS = 10V.

Ultra Low gate charge (typical 28nC)

Low reverse transfer capacitance

(CRSS = typical 12.0 pF)

Lead-free

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL8N65F□

ITO-220AB

50/Tube

8N65F

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Drain-Source voltage

V_DS

V_GS

I_D

650

±30

Gate -Source voltage

Continuous Drain current

T_C=25℃

600

Single Pulse Avalanche Energy(Note2)

Avalanche Energy,Repetitive(Note1)

Avalanche Current(Note2)

E_AS

E_AR

14.7

I_AR

ISD

Continuous Drain-Source Current

Pulsed Drain-Source Current

Peak Diode Recovery dv/dt(Note4)

Power Dissipation

ISM

dv/dt

P_D

4.5

V/ns

110

R_θ

Junction-to-Case

2.6

℃/W

℃

R_θ

Junction-to-Ambient

62.5

-55 to +150

+150

Junction and Storage Temperature

Maximum Temperature for Soldering

T_J, T_stg

T_L

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

MTM5020A

www.gmesemi.com

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