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BL90N25 PDF预览

BL90N25

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
12页 1407K
描述
BL90N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

BL90N25 数据手册

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BL90N25  
Power MOSFET  
1Description  
BL90N25, the silicon N-channel Enhanced  
MOSFETs, is obtained by advanced MOSFET  
technology which reduce the conduction loss,  
improve switching performance and enhance the  
avalanche energy. The transistor is suitable  
device for SMPS, high speed switching and  
general purpose applications.  
KEY CHARACTERISTICS  
Parameter  
VDS  
Value  
250  
Unit  
V
ID  
90  
A
RDS(ON).Typ  
FEATURES  
0.027  
Fast Switching  
Low Crss  
100% avalanche tested  
Improved dv/dt capability  
RoHS product  
TO-247  
TO-3PN  
APPLICATIONS  
High frequency switching mode power supply  
ORDERING INFORMATION  
Ordering Codes  
BL90N25-F  
BL90N25-W  
Package  
TO-247  
TO-3PN  
Product Code  
90N25  
Packing  
Tube  
Tube  
BL90N25-W  
XXXXProduct Code  
(2) Package type  
(1) Chip name  
XXXX  
YYWW ZZ  
SSSSS  
YYWWYear&Week  
ZZAssembly Code  
SSSSSLot Code  
(1)BL90N25:250V 90A  
(2) F:TO-247 W:TO-3PN  
BL90N25  
Rev 1.0  
3/2019  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  

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