Datasheet > BL8N80F

BL8N80F

更新时间： 2024-04-09 19:01:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	397K
描述
8A, 800V, 178W, N Channel, Power MOSFETs

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BL8N80F 数据手册

Product Specification

8A,800V N-Channel Power Mosfet

FEATURES

BL8N80F



Typically 35 nC Low Gate Charge

8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V

Typically 13 pF Low Crss

Improved dv/dt Capability

Fast Switching Speed

100% Avalanche Tested

RoHS–Compliant Product

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL8N80F

ITO-220AB

50/Tube

8N80F

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GSS

I_D

Parameter

Value

800

±30

Units

Drain-Source voltage

Gate -Source voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

E_AS

E_AR

Avalanche Energy

Repetitive

Single Pulsed

850

17.8

dv/dt

P_D

Peak Diode Recovery dv/dt

Power Dissipation

4.5

178

V/ns

R_θJA

R_θJC

T_J

Junction to Ambient

Junction to Case

62.5

℃/W

℃

0.7

Junction Temperature

+150

T_OPR, Tstg Operating and Storage Temperature

-55 to +150

℃

MTM5021A

www.gmesemi.com

12 3

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