Datasheet > BL900N15D

BL900N15D

更新时间： 2024-11-15 17:02:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	543K
描述
18A, 150V, 63W, N Channel, Power MOSFETs

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BL900N15D 数据手册

N-Channel Enhancement Mode MOSFET

BL900N15D

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

900N15D

BL900N15D

80 pcs / Tube & 2500 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

150

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

2.0

°C /W

MTM1289A: July 2023 [1.0]

www.gmesemi.com

12 3 4 5

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