Datasheet > BL8N60F

BL8N60F

更新时间： 2024-11-15 17:00:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	408K
描述
7.5A, 600V, 48W, N Channel, Power MOSFETs

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BL8N60F 数据手册

Product Specification

N-Channel Enhancement Mode Field Effect Transistor

BL8N60F

FEATURES



R_DS(ON)= 1.2Ω @ V_GS= 10V

Ultra Low gate charge (typical 28nC)

Low reverse transfer capacitance

(C_RSS= typical 12.0 pF)



Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL8N60F

ITO-220AB

50 pcs / Tube

8N60F

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Drain-Source voltage

V_DS

V_GS

600

±30

Gate -Source voltage

Continuous Drain current T_C=25℃

Continuous Drain current T_C=100℃

Single Pulse Avalanche Energy(Note2)

Avalanche Energy,Repetitive(Note1)

Avalanche Current(Note2)

7.5

4.6

I_D

E_AS

E_AR

230

14.7

7.5

I_AR

ISD

Continuous Drain-Source Current

Pulsed Drain-Source Current

Peak Diode Recovery dv/dt(Note4)

Power Dissipation

7.5

ISM

dv/dt

P_D

4.5

V/ns

R_θ

Junction-to-Case

2.6

℃/W

℃

R_θ

Junction-to-Ambient

62.5

-55 to +150

+150

Junction and Storage Temperature

Maximum Temperature for Soldering

T_J, T_stg

T_L

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

MTM5019A

www.gmesemi.com

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