Datasheet > BL8N80KF

BL8N80KF

更新时间： 2024-04-09 19:03:26

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	575K
描述
8A, 800V, 36W, N Channel,Power MOSFETs

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL8N80KF 数据手册

N-Channel Enhancement Mode MOSFET

BL8N80K BL8N80KF

Features



Fast switching

ESD improved capability

Low gate charge

Low reverse transfer capacitances

Mechanical Data



Case: TO-220AB, ITO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-220AB

ITO-220AB

Ordering Information

Part Number

BL8N80K

Package

TO-220AB

ITO-220AB

Shipping Quantity

50 pcs / Tube

Marking Code

8N80K

BL8N80KF

50 pcs / Tube

8N80KF

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

800

Gate-to-Source Voltage

±30

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current

I_D

I_DM

Single Pulse Avalanche Energy ^*3

Power Dissipation (TO-220AB, T_C= 25°C)

Power Dissipation (ITO-220AB, T_C= 25°C)

Operating Junction Temperature Range

Storage Temperature Range

E_AS

350

°C

125

P_D

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

TO-220AB^*1

ITO-220AB

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

R_θJC

R_θJA

2.5

°C /W

MTM1003A: July 2023 [1.1]

www.gmesemi.com

12 3 4 5

下载PDF

与BL8N80KF相关器件

型号	品牌	描述	获取价格	数据表
BL900N15D	Galaxy Microelectronics	18A, 150V, 63W, N Channel, Power MOSFETs	获取价格
BL900P04	Galaxy Microelectronics	-40V, P Channel MOSFETs	获取价格
BL900P04-3L	Galaxy Microelectronics	-40V, P Channel MOSFETs	获取价格
BL900P06D	Galaxy Microelectronics	18A, 60V, 57W, P Channel, Power MOSFETs	获取价格
BL9040E	Galaxy Microelectronics	400V,0.25A,General Purpose PNP Bipolar Transistor	获取价格
BL9040R	Galaxy Microelectronics	400V,0.25A,General Purpose PNP Bipolar Transistor	获取价格