Datasheet > BL8596

BL8596

更新时间： 2024-11-14 12:50:55

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
4页	578K
描述
LDO mode OVP with Integrated P-MOSFET

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BL8596 数据手册

BL8596

LDO mode OVP with Integrated P-MOSFET

DESCRIPTION

FEATURES



A Built-In P-MOSFET

LDO mode makes CHRIN voltage stable around

5.5V

Range of operation input voltage: Max 15V

Charging current up to 1A

Environment Temperature: -20C~85C

The BL8596 is Li+ charger IC with integrated P-

MOSFET. The device is fabricated with advanced

CMOS technology to achieve maintaining low static

power dissipation over a very broad VCC operating

range.



The BL8596 integrates a P-MOSFET and Schottky

diode which is normally a discrete device

employed for conventional battery charging

design of mobile phone system. In addition to

that, BL8596 works like a LDO mode to keep

CHRIN voltage stable when ACIN goes high. And

thus it will not trigger the CHRIN pin over-voltage

protection when ACIN voltage increased to as

high as 15V.

APPLICATIONS



Cell phone and other portable device

APPLICATION CIRCUIT

The BL8596 provides complete Li+ charger

protections and saves the external MOSFET and

Schottky diode for the charger of cell phone’s PMIC.

It is available in a DFN2x2-8L package.

BL8596

The above features and small package make the

BL8596 an ideal part for cell phones applications.

ORDERING INFORMATION / PIN CONFIGURATION / MARKING

BL8596CKBTR

DFN2x2-8L

BL8596CB6TR

SOT23-6L

Top Marking

OBYW

YW means the year and week parts being manufactured, subjected to change. OB is the code of the product;

it will not be changed on any part.

www.belling.com.cn

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