Datasheet > BFS360L6

BFS360L6

更新时间： 2024-09-14 23:35:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管射频放大器
页数	文件大小	规格书
3页	103K
描述
?NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz ?

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BFS360L6 数据手册

BFS360L6

NPN Silicon RF Transistor

Preliminary data

Low voltage/ Low current operation

For low noise amplifiers

For Oscillators up to 3.5 GHz and Pout > 10 dBm

Low noise figure: 1.0 dB at 1.8 GHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFS360L6

Marking

Pin Configuration

1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1

Package

Maximum Ratings

Parameter

Symbol

Value

210

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

102°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

230

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Jan-30-2003

12 3

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