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BFS481E6327 PDF预览

BFS481E6327

更新时间: 2024-11-05 21:09:23
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
6页 552K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN

BFS481E6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.32
最大集电极电流 (IC):0.02 A基于收集器的最大容量:0.4 pF
集电极-发射极最大电压:12 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):50最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

BFS481E6327 数据手册

 浏览型号BFS481E6327的Datasheet PDF文件第2页浏览型号BFS481E6327的Datasheet PDF文件第3页浏览型号BFS481E6327的Datasheet PDF文件第4页浏览型号BFS481E6327的Datasheet PDF文件第5页浏览型号BFS481E6327的Datasheet PDF文件第6页 
BFS481  
Low Noise Silicon Bipolar RF Transistor  
For low noise, high-gain broadband amplifiers at  
4
collector currents from 0.5 mA to 12 mA  
5
3
2
6
1
f = 8 GHz, NF  
= 0.9 dB at 900 MHz  
min  
T
Two (galvanic) internal isolated Transistors in  
one package  
For orientation in reel see package information below  
Easy to use Pb-free (RoHS compliant) and halogen  
free industry standard package with visible leads  
Qualification report according to AEC-Q101 available  
C1  
6
E2  
5
B2  
4
TR2  
TR1  
1
2
3
B1  
E1  
C2  
EHA07196  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFS481  
Marking  
RFs  
Pin Configuration  
1=B 2=E 3=C 4=B 5=E 6=C SOT363  
Package  
1
2013-06-18  

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