Datasheet > BFS483_07

BFS483_07

更新时间： 2024-09-30 12:50:07

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BFS483_07 数据手册

BFS483

NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

• f = 8 GHz, F = 0.9 dB at 900 MHz

• Two (galvanic) internal isolated

Transistor in one package

• For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

TR2

TR1

EHA07196

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFS483

Marking

RHs

Pin Configuration

1=B 2=E 3=C 4=B 5=E 6=C SOT363

Package

¹Pb-containing package may be available upon special request

2007-04-26

12 3 4 5 6

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