Datasheet > BFS386L6

BFS386L6

更新时间： 2024-09-14 23:35:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管射频
页数	文件大小	规格书
4页	107K
描述
?NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BFS386L6 数据手册

BFS386L6

NPN Silicon RF Transistor

Preliminary data

Low voltage/ low current operation

For low noise amplifiers

For oscillators up to 3.5 GHz and Pout > 10 dBm

Low noise figure: TR1: 1.0dB at 1.8 GHz

TR2: 1.1 dB at 1.8 GHz

P-TSLP-6-1

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFS386L6

1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1

Maximum Ratings

Parameter

Collector-emitter voltage

TR1

TR2

Collector-emitter voltage

TR1

TR2

Symbol

Value

Unit

CEO

CES

CBO

EBO

Collector-base voltage

TR1

TR2

Emitter-base voltage

TR1

TR2

Collector current

TR1

TR2

Feb-28-2002

12 3 4

中文翻译

下载PDF

与BFS386L6相关器件

型号	品牌	获取价格	描述	数据表
BFS460L6	INFINEON	获取价格	NPN Silicon RF TWIN Transistor
BFS460L6E6327	INFINEON	获取价格	Transistor
BFS466L6	INFINEON	获取价格	NPN Silicon RF TWIN Transistor
BFS469L6	INFINEON	获取价格	NPN Silicon RF TWIN Transistor
BFS469L6E6327	INFINEON	获取价格	Transistor
BFS480	INFINEON	获取价格	NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication sys
BFS481	INFINEON	获取价格	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector curre
BFS481_07	INFINEON	获取价格	NPN Silicon RF Transistor
BFS481E6327	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, Ultra High Frequency Band, Sili
BFS482	INFINEON	获取价格	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector curr